guilin strong micro-electronics co.,ltd. gm p80n75 n-channel 75v, 10m ? , 80a, to-220 trench power mosfet f eatures advanced trench technology ultra low on-resistance ? low gate charge ! " fast switching # $ _ % & ' ( ) * + , - . / 0 1 ) 2 * 1 . 3 - . / 0 1 4 / . 5 6 7 8 " 9 : applications ; switch mode power supplies _ % ? dc-dc converters and ups < = < = > ? @ a b c ? pwm motor controls d e f g h i g general switching applications j k l % ; internal schematic diagram ?? absolute maximum ratings m n o p q characteristic r s t symbol u v max m n q unit w x drain - source voltage ? O - ? O? b v dss 75 v gate - source voltage ? O - ? O? v gs + 2 5 v drain current (continuous) ? O - Bm i d at tc = 25 c at tc = 70 c 93 78 a drain current (pulsed) ? O - i dm 372 a total device dissipation y z [ p tot ( at tc = 25 c ) 200 w thermal resistance junction -case r j c 0.75 /w junct io n / storage temperature \ ] / ^ _ ] " t j , t stg -55~175
guilin strong micro-electronics co.,ltd. gm p80n75 e lecterical c haracteristics r (t a =25 unless otherwise noted of?? 25 ) characteristic r s t symbol u v min m ` q typ ? max m n q unit w x drain - source breakdown voltage ? O - ? O? ( i d = 25 0 u a, v gs =0 v ) b v dss 75 v gate threshold voltage ? O _ ? ( i d = 25 0 u a, v gs = v ds ) v gs ( th ) 2 4 v zero gate voltage drain current ? ? O (v gs = 0 v, v ds = 75 v) i dss 1 u a gate body leakage ? O ? (v gs = + 25 v, v ds = 0 v) i gss + 10 0 n a static drain-source on-state resistance ??? ? ( i d = 4 0a, v gs = 10v ) r ds ( on ) 8 10 3 a source drain current ? O - ? O i s d 75 a source drain current (pulsed) ? O - ? O ( ) i s dm 380 a diode forward voltage drop ? O ( i sd = 40 a, v gs =0 v ) v sd 1 . 2 v input capacitance b c d (v gs = 0 v, v ds = 2 0 v, f=1 mhz) c iss 620 0 pf common source output capacitance ? ? (v gs = 0 v, v ds = 2 0 v, f=1 mhz) c oss 437 pf gate source charge ? ! " (v ds = 6 0 v, i d = 75 a , v gs = 4.5 v ) q gs 36 nc gate drain charge ? ! " (v ds = 6 0 v, i d = 75 a , v gs = 4.5 v ) q gd 50 nc turn-on time _ rg (v ds = 30 v, i d = 45 a , r gen = 4.7 a , v gs = 10v ) t (on) 60 ns turn-off time % rg (v ds = 30 v, i d = 45 a , r gen = 4.7 a , v gs = 10v ) t (off) 159 ns
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